Optimization of process parameters for the electrical properties in Ga-doped ZnO thin films prepared by r.f. magnetron sputtering

被引：29
作者：
Zhu, D. L. [1 ,2 ]
Wang, Q. [1 ,2 ]
Han, S. [1 ,2 ]
Cao, P. J. [1 ,2 ]
Liu, W. J. [1 ,2 ]
Jia, F. [1 ,2 ]
Zeng, Y. X. [1 ,2 ]
Ma, X. C. [1 ,2 ]
Lu, Y. M. [1 ,2 ]
机构：
[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2014年 / 298卷
基金：
中国国家自然科学基金;
关键词：
Ga-doped ZnO; Magnetron sputtering; Taguchi method; Vacuum annealing; Chemical states of oxygen; RAY PHOTOELECTRON-SPECTROSCOPY; SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES; AL; TRANSPARENT; PHOTOLUMINESCENCE; LUMINESCENCE;
D O I：
10.1016/j.apsusc.2014.01.163
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ga-doped ZnO (GZO) transparent conductive thin films have been deposited on quartz substrates by r.f. magnetron sputtering. The optimization of four process parameters (i.e., vacuum annealing temperature, r.f. power, sputtering pressure, and Ar flow rate) based on Taguchi method has been systematically studied in order to obtain the minimum resistivity. Compared to the optimal parameter set selected from orthogonal array by Taguchi method, the optimal prediction design can receive an improvement of 22.3% in electrical resistivity, and the corresponding resistivity is 8.08 x 10-4 Omega cm. The analysis of variance shows that vacuum annealing temperature is the most significant influencing parameter on the electrical properties in GZO films. X-ray photoelectron spectroscopy and photoluminescence results exhibit that the enhancement in electrical conductivity after vacuum annealing is ascribed to the variation of the chemical states of oxygen in GZO films. With the increase in annealing temperature, the content of absorbed oxygen and interstitial oxygen as acceptors will decrease. (C) 2014 Elsevier B. V. All rights reserved.
引用
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页码：208 / 213
页数：6
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