Growth of CuO and CuGaO2 Thin Films by Spin-coating Method

CuO and CuGaO2 thin films have been grown on Si (100) substrates using a sol-gel spin-coating method. CuO films were successfully fabricated by the annealing around 700 degrees C. At higher temperatures (>800 degrees C), pyramidal CuO islands with 1 similar to 2 mu m in width and 0.4 similar to 0.8 mu m in height were observed. They arranged structures as a straight line parallel to the < 110 > and < 010 > directions, which suggests the self-organized growth of CuO pyramidal islands. Delafossite CuGaO2 films were fabricated as well, using Cu-Ga-O mixed solutions with Ga/(Cu+Ga) atomic ratio of 0.5. These results indicate that Cu-based compounds were fabricated by the sol-gel spin-coating method.