Enhanced Sensing Properties of Fully Depleted Silicon-on-Insulator-Based Extended-Gate Field-Effect Transistor with Dual-Gate Operation

被引：5

作者：

Bae, Tae-Eon ^{[1
]}

Cho, Won-Ju ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 12期

关键词：

THRESHOLD VOLTAGE; PH DETECTION; THIN-FILM; SEMICONDUCTOR; MEMBRANE; ISFET; HYSTERESIS; BIOSENSOR; SENSOR;

D O I：

10.7567/APEX.6.127001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully depleted (FD) silicon-on-insulator (SOI)-based SnO2 extended-gate field-effect transistors (EGFETs) beyond the Nernstian limit of 59 mV/pH were realized by using the dual-gate (DG) operation. The thickness of buried oxide (BOX) of SOI-MOSFETs was adjusted to magnify the capacitive coupling effect between top and bottom gate oxides in DG operation. As a result, the separate SOI-MOSFETs with 750-nm-thick and 200-nm-thick buried oxide (BOX) showed pH sensitivities of 2037.1 and 554.2 mV/pH, respectively, far beyond the Nernstian limit of 59 mV/pH. Also, better stability characteristics, such as the hysteresis phenomenon and drift effect, are achieved from DG operation. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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