Band-to-band tunneling in vertically scaled SiGe: CHBTs

被引：10

作者：

Lagarde, D ^{[1
]}

Chevalier, P ^{[1
]}

Schwartzmann, I ^{[1
]}

Chantre, A ^{[1
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 04期

关键词：

heterojunction bipolar transistor (HBT); negative differential resistance; SiGe; tunneling;

D O I：

10.1109/LED.2006.871853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nonideal base current component with negative differential resistance is observed at low injection on Gummel characteristics of high-speed SiGe:C bipolar transistors. The temperature dependence of this effect and the influence of emitter-base engineering on its magnitude are described. The results point to hand-to-hand tunneling in the emitter-base junction as the physical origin of this phenomenon.

引用

页码：275 / 277

页数：3

共 11 条

[1]

[Anonymous], PHYS SEMICONDUCTOR D

[2]

Chevalier P, 2005, INT EL DEVICES MEET, P983

[3] 300 GHz fmax self-aligned SiGeCHBT optimized towards CMOS compabitility [J].

Chevalier, P ;

Barbalat, B ;

Rubaldo, L ;

Vandelle, B ;

Dutartre, D ;

Bouillon, P ;

Jagueneau, T ;

Richard, C ;

Saguin, F ;

Margain, A ;

Chantre, A .

PROCEEDINGS OF THE 2005 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2005, :120-123

[4] 230-GHz self-aligned SiGeCHBT for optical and millimeter-wave applications [J].

Chevalier, P ;

Fellous, C ;

Rubaldo, L ;

Pourchon, F ;

Pruvost, S ;

Beerkens, R ;

Saguin, F ;

Zerounian, N ;

Barbalat, B ;

Lepilliet, S ;

Dutartre, D ;

Céli, D ;

Telliez, I ;

Gloria, D ;

Aniel, F ;

Danneville, F ;

Chantre, A .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (10) :2025-2034

[5] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].

CHYNOWETH, A ;

LOGAN, RA ;

FELDMANN, WL .

PHYSICAL REVIEW, 1961, 121 (03) :684-&

[6] FORWARD-BIAS TUNNELING - A LIMITATION TO BIPOLAR DEVICE SCALING [J].

DELALAMO, JA ;

SWANSON, RM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :629-631

[7]

HEIMEMANN B, 2002, IEDM, P775

[8] A NEW RECOMBINATION MODEL FOR DEVICE SIMULATION INCLUDING TUNNELING [J].

HURKX, GAM ;

KLAASSEN, DBM ;

KNUVERS, MPG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) :331-338

[9]

SCHERZINGER L, 1993, ENGL STUD AFR, V36, P1

[10] TUNNELING IN BASE-EMITTER JUNCTIONS [J].

STORK, JMC ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1527-1534

← 1 2 →