Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks

被引：16

作者：

Lin, Da-Wei ^{[1
,2
]}

Lee, Chia-Yu ^{[1
,2
]}

Liu, Che-Yu ^{[1
,2
]}

Han, Hau-Vei ^{[1
,2
]}

Lan, Yu-Pin ^{[1
,2
]}

Lin, Chien-Chung ^{[3
]}

Chi, Gou-Chung ^{[1
,2
]}

Kuo, Hao-Chung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Coll Photon, Inst Photon Syst, Guiren Township 71150, Tainan County, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

关键词：

STRAIN;

D O I：

10.1063/1.4768950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study presents the green InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) grown on a GaN nanorods template with SiO2 nanomasks by metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth, microscale air voids were formed between nanorods and the threading dislocations were efficiently suppressed. The electroluminescence measurement reveals that the LEDs on nanorods template with SiO2 nanomasks suffer less quantum-confined Stark effect and exhibit higher light output power and lower efficiency droop at a high injection current as compared with conventional LEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768950]

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