Overheating effect and hole-phonon interaction in SiGe heterostructures

被引：5

作者：

Berkutov, I. B. ^{[1
]}

Andrievskii, V. V. ^{[1
]}

Komnik, Yu. F. ^{[1
]}

Myronov, M. ^{[2
]}

Mironov, O. A. ^{[3
,4
]}

机构：

[1] Natl Acad Sci Ukraine, BI Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine

[2] Musashi Inst Technol, Setagaya Ku, Tokyo 158, Japan

[3] Univ Warwick Sci Pk, Warwick SEMINANO R&D Ctr, Coventry CV4 7EZ, W Midlands, England

[4] Int Lab High Magnet Fields & Low Temp, PL-50985 Wroclaw, Poland

来源：

LOW TEMPERATURE PHYSICS | 2008年 / 34卷 / 11期

关键词：

carrier relaxation time; Ge-Si alloys; phonons; semiconductor heterojunctions; semiconductor quantum wells; Shubnikov-de Haas effect; two-dimensional hole gas;

D O I：

10.1063/1.3009592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of charge-carrier overheating in a two-dimensional (2D) hole gas is realized in a Si1-xGex quantum well, where x=0.13, 0.36, 0.8, or 0.95. The Shubnikov-de Haas (SdH) oscillation amplitude is used as a "thermometer" to measure the temperature of overheated holes. The temperature dependence of the hole-phonon relaxation time is found from an analysis of the change of the dependence of the amplitude of the SdH oscillations on temperature and applied electrical field. Analysis of the temperature dependence of the hole-phonon relaxation time reveals a transition of the 2D system from the regime of "partial inelasticity" to conditions of small-angle scattering.

引用

页码：943 / 946

页数：4

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