Hydrogen sensing characteristics of semipolar (11(2)over-bar2)GaN Schottky diodes

被引：31

作者：

Baik, Kwang Hyeon ^{[1
]}

Kim, Hyonwoong ^{[2
]}

Lee, Sung-Nam ^{[3
]}

Lim, Eunju ^{[4
]}

Pearton, S. J. ^{[5
]}

Ren, F. ^{[6
]}

Jang, Soohwan ^{[2
]}

机构：

[1] Hongik Univ, Sch Mat Sci & Engn, Jochiwon 339701, Sejong, South Korea

[2] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

[3] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, Gyeonggi, South Korea

[4] Dankook Univ, Inst Nanosensor & Biotechnol, Dept Appl Phys, Yongin 448701, South Korea

[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[6] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

LIGHT-EMITTING-DIODES; GAN; MECHANISMS; POLARITY; SURFACE; CELLS;

D O I：

10.1063/1.4866010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen detection characteristics of semipolard (11 (2) over bar2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-planed (11 (2) over bar2) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53 eV at 25 degrees C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN. (C) 2014 AIP Publishing LLC.

引用

页数：3

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