机构:
Univ Roma Tor Vergata, Dept Elect Engn, Ctr Hybrid & Organ Solar Energy CHOSE, I-00133 Rome, ItalyPolitecn Torino, Dept Elect & Telecommun, Corso Duca Abruzzi 24, I-10129 Turin, Italy
double junction;
perovskite;
silicon tandem;
three-terminal;
HIT solar cell;
bipolar junction architecture;
physical simulation;
EFFICIENCY;
LIMIT;
LAYER;
D O I:
10.3390/en15218146
中图分类号:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号:
0807 ;
0820 ;
摘要:
Solar photovoltaic energy is the most prominent candidate to speed up the transition from the existing non-renewable energy system to a more efficient and environmentally friendly one. Currently, silicon cells dominate the photovoltaic market owing to their cost-effectiveness and high efficiency, nowadays approaching the theoretical limit. Higher efficiency can be achieved by tandem devices, where a wide bandgap semiconductor is stacked on top of the silicon cell. Thin-film perovskite technology has emerged as one of the most promising for the development of silicon-based tandems because of the optimal perovskite opto-electronic properties and the fast progress achieved in the last decade. While most of the reported perovskite/silicon tandem devices exploit a two-terminal series connected structure, three-terminal solutions have recently drawn significant attention due to their potential for higher energy yield. In this work, we report for the first time a theoretical study, based on validated optical and electrical simulations, of three-terminal perovskite/silicon solar cells employing a hetero-junction bipolar transistor structure. With respect to other three-terminal tandems proposed so far, the transistor structure can be implemented with rear-contact silicon cells, which are simpler and more common than interdigitated back-contact ones.
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Stanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA
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Stanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA
Natl Renewable Energy Lab, Ctr Mat Sci, Golden, CO 80401 USAStanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA
Leijtens, Tomas
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Bush, Kevin A.
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h-index: 0
机构:
Stanford Univ, Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA
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