Planar metal-insulator-metal diodes based on the Nb/Nb2O5/X material system

被引：27

作者：

Chin, Matthew L. ^{[1
]}

Periasamy, Prakash ^{[2
]}

O'Regan, Terrance P. ^{[1
]}

Amani, Matin ^{[1
]}

Tan, Cheng ^{[1
]}

O'Hayre, Ryan P. ^{[2
]}

Berry, Joseph J. ^{[3
]}

Osgood, Richard M., III ^{[4
]}

Parilla, Philip A. ^{[3
]}

Ginley, David S. ^{[3
]}

Dubey, Madan ^{[1
]}

机构：

[1] US Army Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

[2] Colorado Sch Mines, Dept Met & Mat Engn, Golden, CO 80401 USA

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

[4] US Army Natick Soldier Res Dev & Engn Ctr, Natick, MA 01760 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 05期

关键词：

RADIATION;

D O I：

10.1116/1.4818313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the performance of various planar metal-insulator-metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M-2): Nb, Ag, Cu, Ni, Au, and Pt are studied in conjunction with Nb as the anode (M-1) and Nb2O5 (I) as the dielectric. The cathode materials selections were based on results from a prior rapid-screening study that employed a bent-wire metal cathode point-contact method. Planar devices, to enable analysis using standard MIM diode models, were fabricated with the resultant current density-voltage data obtained at both room temperature and 77K. The tunnel barrier heights and dielectric properties for these systems were extracted from the modeling results. Nb/Nb2O5/Pt MIM diodes showed the best performance with an asymmetry ratio greater than 7700, a nonlinearity value of 4.7, and a responsivity of 16.9, all at 0.5V and 300 K. These results confirm prior rapid-screening efforts and further validate the Nb/Nb2O5/Pt system in particular as a promising MIM architecture due to the low barrier height of the junction. (C) 2013 American Vacuum Society.

引用

页数：8

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