Spin-polarized scanning tunneling microscopy of the room-temperature antiferromagnet c-FeSi

被引：9

作者：

Altfeder, Igor ^{[1
]}

Yi, Wei ^{[2
,3
]}

Narayanamurti, V. ^{[3
]}

机构：

[1] USAF, Nanoelect Mat Branch, Res Lab, Wright Patterson AFB, OH 45433 USA

[2] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 02期

关键词：

BAND-STRUCTURE; IRON SILICIDE; SI(111); SUPERLATTICES; SPECTROSCOPY; LAYERS; FILMS;

D O I：

10.1103/PhysRevB.87.020403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antiferromagnetic spin ordering has been revealed by room-temperature spin-polarized scanning tunneling microscopy (SP-STM) in thin epitaxial films of c-FeSi on Si(111). Spin polarization of tunneling current for unoccupied states is found to be unusually large I-up arrow up arrow/I-down arrow up arrow = 3.8. Atomically sharp spin-frustration domain walls, developing on the surfaces of nanoscale islands, have been observed on SP-STM images. Our results suggest that antiferromagnetism in c-FeSi is driven by Mott-Hubbard transition, and the atomically narrow domain walls are caused by local insulator-to-metal breakdown.

引用

页数：4

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