Spin-polarized scanning tunneling microscopy of the room-temperature antiferromagnet c-FeSi

被引：9
作者：
Altfeder, Igor [1 ]
Yi, Wei [2 ,3 ]
Narayanamurti, V. [3 ]
机构：
[1] USAF, Nanoelect Mat Branch, Res Lab, Wright Patterson AFB, OH 45433 USA
[2] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
来源：
PHYSICAL REVIEW B | 2013年 / 87卷 / 02期
关键词：
BAND-STRUCTURE; IRON SILICIDE; SI(111); SUPERLATTICES; SPECTROSCOPY; LAYERS; FILMS;
D O I：
10.1103/PhysRevB.87.020403
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Antiferromagnetic spin ordering has been revealed by room-temperature spin-polarized scanning tunneling microscopy (SP-STM) in thin epitaxial films of c-FeSi on Si(111). Spin polarization of tunneling current for unoccupied states is found to be unusually large I-up arrow up arrow/I-down arrow up arrow = 3.8. Atomically sharp spin-frustration domain walls, developing on the surfaces of nanoscale islands, have been observed on SP-STM images. Our results suggest that antiferromagnetism in c-FeSi is driven by Mott-Hubbard transition, and the atomically narrow domain walls are caused by local insulator-to-metal breakdown.
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页数：4
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