Stain etching of silicon with V 2 O 5 and FeCl 3: Effect of etching time on photoluminescence

被引：2

作者：

Juyal, Sakshi ^{[1
]}

Kumar, Yogesh ^{[2
]}

Prasad, Brijesh ^{[1
]}

Panwar, Varij ^{[1
]}

Dhiman, Neeraj ^{[3
]}

Kumar, K. C. Nithin ^{[1
]}

Gill, Fateh Singh ^{[1
]}

机构：

[1] Graph Era Deemed Univ, Dehra Dun, Uttarakhand, India

[2] Univ Autonoma Estado Morelos, Ctr Invest Ingn & Ciencias Aplicadads, Cuernavaca, Morelos, Mexico

[3] Graph Era Hill Univ, Dehra Dun, Uttarakhand, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2020年 / 26卷

关键词：

POROUS SILICON; OPTICAL-PROPERTIES; ETCHANT; ARRAYS;

D O I：

10.1016/j.matpr.2020.02.714

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：3193 / 3196

页数：4

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