Stain etching of silicon with V 2 O 5 and FeCl 3: Effect of etching time on photoluminescence

被引：2
作者：
Juyal, Sakshi [1 ]
Kumar, Yogesh [2 ]
Prasad, Brijesh [1 ]
Panwar, Varij [1 ]
Dhiman, Neeraj [3 ]
Kumar, K. C. Nithin [1 ]
Gill, Fateh Singh [1 ]
机构：
[1] Graph Era Deemed Univ, Dehra Dun, Uttarakhand, India
[2] Univ Autonoma Estado Morelos, Ctr Invest Ingn & Ciencias Aplicadads, Cuernavaca, Morelos, Mexico
[3] Graph Era Hill Univ, Dehra Dun, Uttarakhand, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2020年 / 26卷
关键词：
POROUS SILICON; OPTICAL-PROPERTIES; ETCHANT; ARRAYS;
D O I：
10.1016/j.matpr.2020.02.714
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3193 / 3196
页数：4
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