Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas

被引：7

作者：

Lee, KP ^{[1
]}

Jung, KB ^{[1
]}

Srivastava, A ^{[1
]}

Kumar, D ^{[1
]}

Singh, RK ^{[1
]}

Pearton, SJ ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 10期

关键词：

D O I：

10.1149/1.1392549

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High density plasma etching of (Ba, Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl-2/Ar and CH4/H-2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 100 Angstrom min(-1)) under all con ditions, the Cl-2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of similar to 900 Angstrom min(-1) for both materials were achieved with selectivities of similar to 16 for BST and similar to 7 for LNO over Si. A single layer of thick (similar to 7 mu m) photoresist is an effective mask under these conditions. (C) 1999 The Electrochemical Society. S0013-4651(99)01-086-1. All rights reserved.

引用

页码：3778 / 3782

页数：5

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