A study of stacked PECVD silicon nitride films used for surface micromachined membranes

被引:13
|
作者
Mikolajunas, M. [1 ,2 ]
Kaliasas, R. [2 ]
Andrulevicius, M. [3 ]
Grigaliunas, V. [3 ]
Baltrusaitis, J. [4 ,5 ]
Virzonis, D. [1 ,2 ]
机构
[1] Kaunas Univ Technol, Panevezys Inst, Dept Elect Engn, LT-35212 Panevezyz, Lithuania
[2] JSC Minatech, LT-50131 Kaunas, Lithuania
[3] Inst Phys Elect, LT-50131 Kaunas, Lithuania
[4] Univ Iowa, Dept Chem, Iowa City, IA 52242 USA
[5] Univ Iowa, Cent Microscopy Res Facil, Iowa City, IA 52242 USA
关键词
Silicon nitride; Stacked films; PECVD; Membrane arrays; Film stress;
D O I
10.1016/j.tsf.2008.06.063
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon nitride stacked films containing three layers differing in mechanical-chemical properties are synthesized using plasma enhanced chemical vapor deposition method from monosilane (SiH4) and ammonia (NH3) mixture. The composition is analyzed using X-ray Photoelectron Spectroscopy and stress is measured using a substrate bending method. The ability to obtain stacked films with the custom tensile stress in the overall structure was demonstrated by the series of experiments. The tensile stress in the top and bottom films was obtained between 200 and 300 MPa whereas the stress in the middle film could be adjusted from compressive 60 MPa to tensile 300 MPa. Since the appropriate stress value is important in achieving required mechanical properties of the membranes, the results obtained are discussed in the context of surface micromachined membrane structures. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:8788 / 8792
页数:5
相关论文
共 50 条
  • [41] Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon
    Lelievre, J. -F.
    Fourmond, E.
    Kaminski, A.
    Palais, O.
    Ballutaud, D.
    Lemiti, M.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (08) : 1281 - 1289
  • [42] Prepared and Surface Analyzed of Nano-silicon Nitride Thin Films
    Yu Gui-wen
    Dong Jing
    Tian Ye
    Li Wen-xin
    Gong Xue
    FUNDAMENTAL OF CHEMICAL ENGINEERING, PTS 1-3, 2011, 233-235 : 2015 - 2018
  • [43] Stack of PECVD silicon nitride nano-films on optical fiber end-face for refractive index sensing
    Smietana, Mateusz
    Koba, Marcin
    Rozycki-Bakon, Radoslaw
    23RD INTERNATIONAL CONFERENCE ON OPTICAL FIBRE SENSORS, 2014, 9157
  • [44] Study of the stress-related vacancy generation in silicon due to silicon nitride films
    Gracia, FF
    Lóopez, JC
    Mijares, MA
    REVISTA MEXICANA DE FISICA, 1999, 45 (02) : 156 - 162
  • [46] Linear and nonlinear properties study of silicon nitride films for integrated photonics
    Aguayo-Alvarado, A. L.
    Araiza-Sixtos, F. A.
    Abundiz-Cisneros, N.
    Rangel-Rojo, R.
    Garay-Palmett, K.
    De La Cruz, W.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2023, 613
  • [47] Study of nitrous oxide plasma oxidation of silicon nitride thin films
    Bose, M
    Basa, DK
    Bose, DN
    APPLIED SURFACE SCIENCE, 2000, 158 (3-4) : 275 - 280
  • [48] Study on the thermal conductivity and microstructure of silicon nitride used for power electronic substrate
    Xu, W
    Ning, XS
    Zhou, HP
    Lin, YB
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 99 (1-3): : 475 - 478
  • [49] Multi-technique study of composition, structure, and bonding in PECVD amorphous silicon carbide films
    Greenhorn, Scott
    Stambouli, Valerie
    Bano, Edwige
    Pierre, Francois
    Gauthier, Nicolas
    Weber, Matthieu
    Lagoyannis, Anastassios
    Taimpiri, Evagelia
    Pelissier, Bernard
    Zekentes, Konstantinos
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 192
  • [50] Process parameter selection study on SiNx:H films by PECVD method for silicon solar cells
    Wu, Xiaosong
    Zhang, Zaifang
    Liu, Yuan
    Chu, Xuening
    Li, Yupeng
    SOLAR ENERGY, 2015, 111 : 277 - 287