Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

被引：3
作者：
Motohisa, J
Nakajima, F
Fukui, T
van der Wiel, WG
Elzerman, JM
De Franceschi, S
Kouwenhoven, LP
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[2] Delft Univ Technol, Dept Appl Phys, NL-2600 GA Delft, Netherlands
[3] Delft Univ Technol, DIMES, NL-2600 GA Delft, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期
关键词：
D O I：
10.1063/1.1470246
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature transport properties. We observe clear Coulomb oscillations in a SET fabricated in combination with direct growth of nanostructures and lithographically defined metal gates. The magnetic field dependence of the Coulomb oscillations as well as the Coulomb diamonds suggest strong carrier confinement in our QD. (C) 2002 American Institute of Physics.
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页码：2797 / 2799
页数：3
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