Topological photonic crystal of large valley Chern numbers

被引:43
作者
Xi, Xiang [1 ]
Ye, Kang-Ping [1 ]
Wu, Rui-Xin [1 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 200023, Peoples R China
基金
中国国家自然科学基金;
关键词
SPIN;
D O I
10.1364/PRJ.396872
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The recent realizations of a topological valley phase in a photonic crystal, an analog of gapped valleytronic materials in an electronic system, are limited to the valley Chem number of one. In this paper, we present a type of valley phase that can have a large valley Chern number of two or three. The valley phase transitions between the different valley Chern numbers (from one to three) are realized by changing the configuration of the unit cell. We demonstrate that these topological phases can guide the wave propagation robustly along a sharply bent domain wall. We believe our results are promising for the exploration of new topological phenomena in photonic systems. (C) 2020 Chinese Laser Press
引用
收藏
页码:B1 / B7
页数:7
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