Optimizing the thermoelectric performance of FeVSb half-Heusler compound via Hf-Ti double doping

被引:33
作者
El-Khouly, A. [1 ,2 ]
Novitskii, A. [1 ]
Serhiienko, I [1 ]
Kalugina, A. [1 ]
Sedegov, A. [1 ]
Karpenkov, D. [3 ]
Voronin, A. [1 ]
Khovaylo, V [1 ,4 ]
Adam, A. M. [5 ]
机构
[1] Natl Univ Sci & Technol MISIS, Moscow 119049, Russia
[2] Damanhour Univ, Fac Sci, Phys Dept, Damanhour 22516, Egypt
[3] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
[4] Natl Res South Ural State Univ, Chelyabinsk 454080, Russia
[5] Sohag Univ, Fac Sci, Phys Dept, Sohag 82524, Egypt
基金
俄罗斯基础研究基金会;
关键词
Thermoelectric performance; Half-heusler alloys; Hf-Ti dual-doping; Disorder scattering parameters; Phonon scattering; Lattice thermal conductivity; LATTICE THERMAL-CONDUCTIVITY; FIGURE-OF-MERIT; P-TYPE; TRANSPORT-PROPERTIES; ENHANCEMENT; SEMICONDUCTOR; TEMPERATURE; CRYSTAL; ALLOYS; SIZE;
D O I
10.1016/j.jpowsour.2020.228768
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
FeVSb-based half-Heusler (HH) compound has recently been identified as promising medium-high temperature thermoelectric (TE) materials for power generation applications. In this study, enhanced thermoelectric performance of Fe(V0.8Hf0.2)(1-x)TixSb (x = 0.0, 0.2, 0.4, 0.5, 0.6) HH alloys by Hf-Ti dual-doping was reported studied in a temperature range from 100 to 900 K. A high content of Ti doping not only optimized the carrier concentration but also reduced the lattice thermal conductivity, which all contribute to high zT. As a result, a zT value was increased by -20% at 873 K for Fe(V0.8Hf0.2)(0.8)Ti0.2Sb compound. Hf-Ti dual doping significantly reduced the lattice thermal conductivity due to enhanced point defect scattering which is mainly attributed to mass fluctuations. Hence, suppressed the material's total thermal conductivity. A reduction of similar to 20% was obtained for the Fe(V0.8Hf0.2)(0.8)Ti0.2Sb sample, compared with the single Hf-doped FeVSb sample and of similar to 80% compared to FeVSb at room temperature.
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页数:8
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