Finite element and Monte Carlo simulation of submicrometer silicon n-MOSFET's

被引：5
|
作者：
Hadji, D
Maréchal, Y
Zimmermann, J
机构：
[1] Univ Grenoble 1, ENSIEG, CNRS UMR 5529, INPG,Lab Electrotech Grenoble, F-38402 St Martin Dheres, France
[2] ENSERG, CNRS UMR 5531, INPG, Lab Phys Composants Semicond, F-38016 Grenoble 1, France
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 03期
关键词：
finite element method; Monte Carlo method; Poisson's equation; carrier transport equation; MOS devices;
D O I：
10.1109/20.767383
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-dimensional hybrid simulator suitable for modeling very small semiconductor devices has been developed in which Monte Carlo and finite element methods are combined. The finite element method is used for solving the Poisson equation, and the Monte Carlo method is used for solving the carrier transport equation. Numerical results performed on a submicron n-channel MOSFET by this approach are reported.
引用
收藏
页码：1809 / 1812
页数：4
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