Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

被引:297
作者
Song, Seung Min [1 ]
Park, Jong Kyung [1 ]
Sul, One Jae [1 ]
Cho, Byung Jin [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
Graphene; work function; contact resistance; capacitance-voltage; flat band voltage; QUANTUM CAPACITANCE; LARGE-AREA; QUALITY; FILMS;
D O I
10.1021/nl300266p
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Although the work function of graphene under a given metal electrode is critical information for the realization of high-performance graphene-based electronic devices, relatively little relevant research has been carried out to date. In this work, the work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance-voltage (C-V) characteristics of a metal-graphene-oxide-semiconductor (MGOS) capacitor structure. In contrast to the high work function of exposed graphene of 489-5.16 eV, the work function of graphene under a metal electrode varies depending on the metal species. With a Cr/Au or Ni contact, the work function of graphene is pinned to that of the contacted metal, whereas with a Pd or Au contact the work function assumes a value of similar to 4.62 eV regardless of the work function of the contact metal. A study of the gate voltage dependence on the contact resistance shows that the latter case provides lower contact resistance.
引用
收藏
页码:3887 / 3892
页数:6
相关论文
共 46 条
  • [1] Deposition of preformed gold clusters on HOPG and gold substrates:: influence of the substrate on the thin film morphology
    Bardotti, L
    Prével, B
    Treilleux, M
    Mélinon, P
    Perez, A
    [J]. APPLIED SURFACE SCIENCE, 2000, 164 : 52 - 59
  • [2] Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers
    Berciaud, Stephane
    Ryu, Sunmin
    Brus, Louis E.
    Heinz, Tony F.
    [J]. NANO LETTERS, 2009, 9 (01) : 346 - 352
  • [3] Substrate Gating of Contact Resistance in Graphene Transistors
    Berdebes, Dionisis
    Low, Tony
    Sui, Yang
    Appenzeller, Joerg
    Lundstrom, Mark S.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) : 3925 - 3932
  • [4] Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
    Blake, P.
    Yang, R.
    Morozov, S. V.
    Schedin, F.
    Ponomarenko, L. A.
    Zhukov, A. A.
    Nair, R. R.
    Grigorieva, I. V.
    Novoselov, K. S.
    Geim, A. K.
    [J]. SOLID STATE COMMUNICATIONS, 2009, 149 (27-28) : 1068 - 1071
  • [5] Raman fingerprint of charged impurities in graphene
    Casiraghi, C.
    Pisana, S.
    Novoselov, K. S.
    Geim, A. K.
    Ferrari, A. C.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (23)
  • [6] Double Contacts for Improved Performance of Graphene Transistors
    Franklin, Aaron D.
    Han, Shu-Jen
    Bol, Ageeth A.
    Perebeinos, Vasili
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (01) : 17 - 19
  • [7] Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy
    Giannazzo, F.
    Sonde, S.
    Raineri, V.
    Rimini, E.
    [J]. NANO LETTERS, 2009, 9 (01) : 23 - 29
  • [8] Doping graphene with metal contacts
    Giovannetti, G.
    Khomyakov, P. A.
    Brocks, G.
    Karpan, V. M.
    van den Brink, J.
    Kelly, P. J.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (02)
  • [9] Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance
    Hsu, Allen
    Wang, Han
    Kim, Ki Kang
    Kong, Jing
    Palacios, Tomas
    [J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (08) : 1008 - 1010
  • [10] Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
    Huard, B.
    Stander, N.
    Sulpizio, J. A.
    Goldhaber-Gordon, D.
    [J]. PHYSICAL REVIEW B, 2008, 78 (12):