Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films

被引:14
作者
Jun, JH [1 ]
Choi, DJ [1 ]
机构
[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
关键词
lanthanum oxide; lanthanum aluminate; structural and electrical properties; hydration;
D O I
10.1016/j.tsf.2005.09.116
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lanthanum oxide and lanthanum aluminate thin films were deposited oil Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La2O3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminium. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:205 / 208
页数:4
相关论文
共 14 条
[1]   Annealing of RuO2 and Ru bottom electrodes and its effects on the electrical properties of (Ba,Sr)TiO3 thin films [J].
Ahn, JH ;
Choi, WY ;
Lee, WJ ;
Kim, HG .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01) :284-289
[2]   Comparative study of zirconia-mullite and alumina-zirconia composites [J].
Biswas, NC ;
Chaudhuri, SP .
BULLETIN OF MATERIALS SCIENCE, 1999, 22 (01) :37-47
[3]   Molecular adsorption characteristics of lanthanum oxide surfaces: the interaction of water with oxide overlayers grown on Cu(111) [J].
De Asha, AM ;
Critchley, JTS ;
Nix, RM .
SURFACE SCIENCE, 1998, 405 (2-3) :201-214
[4]  
*INT SEMATECH, 2003, INT TECHN ROADM SEM
[5]   Investigation of ruthenium electrodes for (Ba,Sr)TiO3 thin films [J].
Joo, JH ;
Seon, JM ;
Jeon, YC ;
Oh, KY ;
Roh, JS ;
Kim, JJ ;
Choi, JT .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A) :3396-3401
[6]   A study on the lanthanum aluminate thin film as a gate dielectric material [J].
Jun, JH ;
Choi, DJ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11A) :7576-7578
[7]  
Jun JH, 2004, J KOREAN PHYS SOC, V44, P22
[8]   Properties of lanthanum aluminate thin film deposited by MOCVD [J].
Jun, JH ;
Jun, J ;
Choi, DJ .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (11) :F37-F39
[9]  
KIKUCHI A, 2002, 202 M EL SOC SALT LA, P157
[10]   Electrical characteristics improvement of oxygen-annealed MOCVD-TiO2 films [J].
Lee, MK ;
Huang, JJ ;
Wu, TS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (06) :519-523