Thermal Rectification in Three-Dimensional Asymmetric Nanostructure

被引:67
|
作者
Lee, Jonghoon [1 ,2 ]
Varshney, Vikas [1 ,2 ]
Roy, Ajit K. [1 ]
Ferguson, John B. [1 ]
Farmer, Barry L. [1 ]
机构
[1] USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA
[2] Universal Technol Corp, Dayton, OH 45432 USA
关键词
Thermal rectifier; phonon density of states; central limit theorem; molecular dynamics;
D O I
10.1021/nl301006y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Previously, thermal rectification has been reported in several low-dimensional shape-asymmetric nanomaterials. In this Letter, we demonstrate that a three-dimensional crystalline material with an asymmetric shape also displays as strong thermal rectification as low-dimensional materials do. The observed rectification is attributed to the stronger temperature dependence of vibration density of states in the narrower region of the asymmetric material, resulting from the small number of atomic degrees of freedom directly interacting with the thermostat. We also demonstrate that the often reported "device shape asymmetry" is not a sufficient condition for thermal rectification. Specifically, the size asymmetry in boundary thermal contacts is equally important toward determining the magnitude of thermal rectification. When the boundary thermal contacts retain the same size asymmetry as the nanomaterial, the overall system displays notable thermal rectification, in accordance with existing literature. However, when the wider region of the asymmetric nanomaterial is partially thermostatted by a smaller sized contact, thermal rectification decreases dramatically and even changes direction.
引用
收藏
页码:3491 / 3496
页数:6
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