High-Sensitivity Low-Temperature Poly-Silicon Lateral Photodetector with Ultrathin Absorption Layer via Body-Extension-Contact Structure

被引：0

作者：

Wei, Yin-Chang ^{[1
]}

Lee, I-Che

Cheng, Huang-Chung

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 12期

关键词：

Low-Temperature Poly-Silicon (LTPS); Photodetector (PD); Body-Extension-Contact (BEC) Structure; THIN-FILM TRANSISTORS; HIGH IDEALITY FACTORS; THEORETICAL-MODEL; JUNCTION DIODES;

D O I：

10.1166/jnn.2016.13646

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high-sensitivity lateral photodetector (PD) with an ultrathin absorption layer was fabricated by a low-temperature poly-silicon (LTPS) process via body-extension-contact (BEC) structure. The sensitivity of the LTPS PD with the BEC structure achieved a superior photo/dark current ratio of 105 compared to the ratio of 10(0.5) for the normal PD. Further, for the first time, the effect of photosensitivity and geometry on the ideality factor (n) was investigated in this study. The developed high-performance PD is suitable for application in image scanners, ambient light sensors, or devices embedded in larger area electronics.

引用

页码：12708 / 12713

页数：6

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