Spectral properties and isotope effect in strongly interacting systems: Mott-Hubbard insulator versus polaronic semiconductor

被引：22
|
作者：
Fratini, S
Ciuchi, S
机构：
[1] CNRS, Lab Etud Proprietes Elect Solides, F-38042 Grenoble 9, France
[2] Univ Aquila, Dipartimento Fis, I-67010 Coppito, Italy
[3] Univ Aquila, Ist Nazl Fis Mat, I-67010 Coppito, Italy
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.72.235107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the electronic spectral properties in two examples of strongly interacting systems: A Mott-Hubbard insulator with additional electron-boson interactions, and a polaronic semiconductor. An approximate unified framework is developed for the high energy part of the spectrum, in which the electrons move in a random field determined by the interplay between magnetic and bosonic fluctuations. When the boson under consideration is a lattice vibration, the resulting isotope effect on the spectral properties is similar in both cases, being strongly temperature and energy dependent, in qualitative agreement with recent photoemission experiments in the cuprates.
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页数：9
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