1.48 mu m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers

被引：0

作者：

An, HY ^{[1
]}

Yang, SR ^{[1
]}

Sun, HB ^{[1
]}

Peng, YH ^{[1
]}

Liu, SY ^{[1
]}

机构：

[1] JILIN UNIV,DEPT ELECT ENGN,STATE KEY LAB INTEGRATED OPTOELECT,CHANGCHUN 130023,PEOPLES R CHINA

来源：

SEMICONDUCTOR LASERS II | 1996年 / 2886卷

关键词：

1.48 mu m; InGaAs/InGaAsP; strained layer; lasers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：300 / 304

页数：5

共 50 条

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[50] LOGARITHMIC GAIN CURRENT-DENSITY CHARACTERISTIC OF INGAAS/INGAALAS/INP MULTI-QUANTUM-WELL SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASERS [J].

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