1.48 mu m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers

被引：0
|
作者：
An, HY [1 ]
Yang, SR [1 ]
Sun, HB [1 ]
Peng, YH [1 ]
Liu, SY [1 ]
机构：
[1] JILIN UNIV,DEPT ELECT ENGN,STATE KEY LAB INTEGRATED OPTOELECT,CHANGCHUN 130023,PEOPLES R CHINA
来源：
SEMICONDUCTOR LASERS II | 1996年 / 2886卷
关键词：
1.48 mu m; InGaAs/InGaAsP; strained layer; lasers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：300 / 304
页数：5
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