An Output-Capacitorless Low-Dropout Regulator with Slew-Rate Enhancement

被引：4
作者：
Ni, Shenglan [1 ,2 ]
Chen, Zhizhi [1 ,2 ]
Hu, Chenkai [1 ,2 ]
Chen, Houpeng [1 ]
Wang, Qian [1 ]
Li, Xi [1 ]
Song, Sannian [1 ]
Song, Zhitang [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
来源：
MICROMACHINES | 2022年 / 13卷 / 10期
基金：
中国国家自然科学基金;
关键词：
low-dropout regulator (LDO); output-capacitorless; push-pull; slew-rate enhancement; QUIESCENT CURRENT; LDO; TRANSCONDUCTANCE; COMPENSATION;
D O I：
10.3390/mi13101594
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
A novel output-capacitorless low-dropout regulator (OCL-LDO) with an embedded slewrate-enhancement (SRE) circuit is presented in this paper. The SRE circuit adopts a transient current-boost strategy to improve the slew rate at the gate of the power transistor when a large voltage spike at the output is detected. In addition, a feed-forward transconductance cell is introduced to form a push-pull output structure with the power transistor. The simulation results show that the maximum transient output voltage variation is 23.5 mV when the load current I-LO(AD) is stepped from 0 to 100 mA in 100 ns with a load capacitance of 100 pF, and the settling time is 1.2 mu s. The proposed OCL-LDO consumes a quiescent current of 30 mu A and has a dropout voltage of 200 mV for the maximum output current of 100 mA.
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收藏
页数：12
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