Simultaneous Switching Noise and IR Drop in Graphene Nanoribbon Power Distribution Networks

被引：0

作者：

Das, Debaprasad ^{[1
]}

Rahaman, Hafizur ^{[1
]}

机构：

[1] Bengal Engn & Sci Univ, Sch VLSI Technol, Sibpur, India

来源：

2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2012年

关键词：

Graphene nanoribbon (GNR); interconnect; delay; simultaneous switching noise (SSN); power supply voltage drop (IR drop);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The work in this paper presents the analyses of simultaneous switching noise (SSN) and power supply voltage (IR drop) in graphene nanoribbon (GNR) interconnects for 16 nm technology node. The electrical equivalent model is used to derive the electrical circuit parameters for GNR interconnects. The results are compared with that of traditional copper (Cu) based interconnects. It has been found that the peak SSN in GNR is 41-23% less than that in Cu interconnects. The peak IR drop is 38-34% less in GNR as compared to Cu wires. The propagation delay is critically impacted due to SSN and IR drop. GNR shows up to 64.49% less impact in the delay in comparison to that of Cu based power networks.

引用

页数：6

共 8 条

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