Low-Voltage FGMOS Based Voltage-to-Current Converter

被引：0

作者：

Pandey, Rishikesh ^{[1
]}

Gupta, Maneesha ^{[2
]}

机构：

[1] Thapar Univ, Dept Elect & Comm Engn, Patiala, Punjab, India

[2] Netaji Subhas Inst Technol, Dept Elect & Comm Engn, New Delhi, India

来源：

INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 2013年 / 43卷 / 03期

关键词：

Floating gate MOSFETs; low-voltage; mobility degradation; SPICE; VTC converter; MODE; DESIGN; CHARGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a novel floating-gate MOSFET (FGMOS) based voltage-to-current (VTC) converter. The proposed VTC converter has rail-to-rail input dynamic range, low THD (total harmonic distortion) and low power dissipation. The VTC converter has been simulated using SPICE in 0.25-mu m CMOS technology with the supply voltages of +/- 0.75V. The simulation results of the VTC converter demonstrate THD of less than 1%, 3-dB frequency of 1.63GHz and maximum power dissipation of 0.84mW.

引用

页码：173 / 178

页数：6

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