Fast-Response Single-Nanowire Photodetector Based on ZnO/WS2 Core/Shell Heterostructures

被引:68
作者
Butanovs, Edgars [1 ]
Vlassov, Sergei [2 ]
Kuzmin, Alexei [1 ]
Piskunov, Sergei [1 ]
Butikova, Jelena [1 ]
Polyakov, Boris [1 ]
机构
[1] Univ Latvia, Inst Solid State Phys, Kengaraga St 8, LV-1063 Riga, Latvia
[2] Univ Tartu, Inst Phys, W Ostwaldi 1, EE-50411 Tartu, Estonia
关键词
core/shell nanowires; 1D/1D heterostructures; van der Waals epitaxy; transitional metal chalcogenides; photodetectors; TRANSITION-METAL DICHALCOGENIDES; CORE-SHELL; THIN-FILM; ULTRAVIOLET; WS2;
D O I
10.1021/acsami.8b02241
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The surface plays an exceptionally important role in nanoscale materials, exerting a strong influence on their properties. Consequently, even a very thin coating can greatly improve the optoelectronic properties of nanostructures by modifying the light absorption and spatial distribution of charge carriers. To use these advantages, 1D/1D heterostructures of ZnO/WS2 core/shell nanowires with a-few-layers-thick WS2 shell were fabricated. These heterostructures were thoroughly characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. Then, a single-nanowire photoresistive device was assembled by mechanically positioning ZnO/WS2 core/shell nanowires onto gold electrodes inside a scanning electron microscope. The results show that a few layers of WS2 significantly enhance the photosensitivity in the short wavelength range and drastically (almost 2 orders of magnitude) improve the photoresponse time of pure ZnO nanowires. The fast response time of ZnO/WS2 core/shell nanowire was explained by electrons and holes sinking from ZnO nanowire into WS2 shell, which serves as a charge carrier channel in the ZnO/WS2 heterostructure. First-principles calculations suggest that the interface layer i-WS2, bridging ZnO nanowire surface and WS2 shell, might play a role of energy barrier, preventing the backward diffusion of charge carriers into ZnO nanowire.
引用
收藏
页码:13869 / 13876
页数:8
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