An Energy Harvesting Wireless Sensor Node for IoT Systems Featuring a Near-Threshold Voltage IA-32 Microcontroller in 14nm Tri-Gate CMOS

被引：0

作者：

Paul, Somnath ^{[1
]}

Honkote, Vinayak ^{[1
]}

Kim, Ryan ^{[1
]}

Majumder, Turbo ^{[1
]}

Aseron, Paolo ^{[2
]}

Grossnickle, Vaughn ^{[3
]}

Sankman, Robert ^{[4
]}

Mallik, Debendra ^{[4
]}

Jain, Sandeep ^{[5
]}

Vangal, Sriram ^{[1
]}

Tschanz, James ^{[1
]}

De, Vivek ^{[1
]}

机构：

[1] Intel Corp, Circuit Res Lab, Hillsboro, OR 97124 USA

[2] Intel Corp, Silicon Technol Prototyping Lab, Hillsboro, OR 97124 USA

[3] Intel Corp, Platform Engn Grp, Hillsboro, OR 97124 USA

[4] Intel Corp, Assembly & Test Technol Dev, Hillsboro, OR 97124 USA

[5] Intel Corp, Internet Things Grp, Hillsboro, OR 97124 USA

来源：

2016 IEEE SYMPOSIUM ON VLSI CIRCUITS (VLSI-CIRCUITS) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wireless sensor node (WSN) integrates a 0.79mm(2) near-threshold voltage (NTV) 32-bit Intel Architecture (IA) microcontroller (MCU) in 14nm tri-gate CMOS, along with solar cell, energy harvester, flash memory, sensors and Bluetooth Low Energy (BLE) radio, to enable always-on always-sensing (AOAS) and advanced edge computing capabilities in Internet-of-Things (IoT) systems. The MCU features four independent voltage-frequency islands (VFI), a low-leakage SRAM array, an on-die oscillator clock source capable of operating at sub-threshold voltage, power gating and multiple active/sleep states, managed by an integrated power management unit (PMU). The MCU operates across a wide frequency (voltage) range of 297MHz (1V) to 0.5MHz (308mV), and achieves a peak energy efficiency of 17pJ/cycle at an optimum supply voltage (VOPT) of 370mV, operating at 3.5MHz. The WSN, powered by a solar cell, demonstrates sustained MHz AOAS operation, consuming only 360 mu W.

引用

页数：2

共 6 条

[1] A Sub-cm3 Energy-Harvesting Stacked Wireless Sensor Node Featuring a Near-Threshold Voltage IA-32 Microcontroller in 14-nm Tri-Gate CMOS for Always-ON Always-Sensing Applications
Paul, Somnath
Honkote, Vinayak
Kim, Ryan Gary
Majumder, Turbo
Aseron, Paolo A.
Grossnickle, Vaughn
Sankman, Robert
Mallik, Debendra
Wang, Tao
Vangal, Sriram
Tschanz, James W.
De, Vivek
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (04) : 961 - 971
[2] An Energy-Efficient Graphics Processor Featuring Fine-Grain DVFS with Integrated Voltage Regulators, Execution-Unit Turbo, and Retentive Sleep in 14nm Tri-Gate CMOS
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Tokunaga, Carlos
Malavasi, Andres
Vaidya, Vaibhav
Mendon, Ashwin
Mathaikutty, Deepak
Kulkarni, Jaydeep
Augustine, Charles
Cho, Minki
Kim, Stephen
Matthew, George
Jain, Rinkle
Ryan, Joseph
Peng, Chung-Ching
Paul, Somnath
Vangal, Sriram
Esparza, Brando Perez
Cuellar, Luis
Woodman, Michael
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Chinya, Gautham
Zou, Chris
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2018 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - (ISSCC), 2018, : 38 - +
[3] A cm-Scale Self-Powered Intelligent and Secure IoT Edge Mote Featuring an Ultra-Low-Power SoC in 14nm Tri-Gate CMOS
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2018 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - (ISSCC), 2018, : 46 - +
[4] 34.4Mbps 1.56Tbps/W DEFLATE Decompression Accelerator Featuring Block-Adaptive Huffman Decoder in 14nm Tri-gate CMOS for IoT Platforms
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ESSCIRC 2018 - IEEE 44TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2018, : 90 - 93
[5] Ultra-Lightweight 548-1080 Gate 166Gbps/W-12.6Tbps/W SIMON 32/64 Cipher Accelerators for IoT in 14nm Tri-gate CMOS
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2018 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC): PROCEEDINGS OF TECHNICAL PAPERS, 2018, : 149 - 152
[6] An Energy-Efficient Graphics Processor in 14-nm Tri-Gate CMOS Featuring Integrated Voltage Regulators for Fine-Grain DVFS, Retentive Sleep, and VMIN Optimization
Meinerzhagen, Pascal A.
Tokunaga, Carlos
Malavasi, Andres
Vaidya, Vaibhav
Mendon, Ashwin
Mathaikutty, D.
Kulkarni, Jaydeep
Augustine, Charles
Cho, Minki
Kim, Stephen T.
Matthew, George E.
Jain, Rinkle
Ryan, Joseph
Peng, Chung-Ching
Paul, Somnath
Vangal, Sriram
Esparza, Brando Perez
Cuellar, L.
Woodman, M.
Iyer, Bala
Maiyuran, Subramaniam
Chinya, G.
Zou, Xiang
Liao, Yuyun
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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2019, 54 (01) : 144 - 157

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