Internal Gain of InGaN/GaN Metal-Insulator-Semiconductor Photodetector

this paper, an InGaN/GaN metal-insulator-semiconductor photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition was studied. The high photoelectric responsivities of 0.31 and 0.27 A/W from the GaN and InGaN layer respectively and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this metal-insulator-semiconductor photodetector. The internal gain of the InGaN/GaN metal-insulator-semiconductor photodetectors measured at different reverse bias. The results indicate that the internal gain of the InGaN/GaN metal-insulator-semiconductor photodetector was 3.5 at 350 nm, 2.7 at 380 nm and the bias voltage at -3V.