Influence of oxygen pressure on the structural, electrical and optical properties of Nb-doped ZnO thin films prepared by pulsed laser deposition

被引:30
作者
Wu, Muying [1 ]
Yu, Shihui [2 ]
He, Lin [1 ]
Zhang, Geng [1 ]
Ling, Dongxiong [1 ]
Zhang, Weifeng [3 ,4 ]
机构
[1] Dongguan Univ Technol, Sch Elect Engn, Dongguan 523808, Guangdong, Peoples R China
[2] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China
[3] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[4] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China
关键词
NZO; Pulsed laser deposition; Oxygen pressure; TCO; OXIDE-FILMS; SUBSTRATE-TEMPERATURE; ZINC-OXIDE; TRANSPARENT; RF;
D O I
10.1016/j.apsusc.2013.11.119
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nb-doped zinc oxide (NZO) transparent conductive thin films with highly (0 0 2)-preferred orientation were deposited on glass substrates by pulsed laser deposition method in oxygen ambience under different oxygen pressures. The as-deposited films were characterized by X-ray diffraction (XRD), Field emission-scanning electron microscopy (FE-SEM), electrical and optical characterization techniques. It was found that a desirable amount of oxygen can reduce the related defect scattering and enhance the carrier mobility. The resistivity and average optical transmittance of the NZO thin films are of 10(-4) Omega cm and over 88%, respectively. The lowest electrical resistivity of the film is found to be about 4.37 x 10(-4) Omega cm. In addition, the influence of oxygen pressure on optical properties in NZO thin films was systematically studied as well. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:219 / 224
页数:6
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