Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing

被引：0
|
作者：
Yao, Yong-Zhao [1 ]
Sato, Koji [1 ]
Sugawara, Yoshihiro [1 ]
Ishikawa, Yukari [1 ]
Okamoto, Yoshihiro [2 ]
Hayashi, Noritaka [2 ]
机构：
[1] Japan Fine Ceram Ctr, 2-4-1 Atsuta Mutsuno, Nagoya, Aichi 4568587, Japan
[2] ACT Corp, Kyoto 6018442, Japan
来源：
DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷
关键词：
Electron beam induced current (EBIC); Mechanical polishing (MP); Off-cut angle; Polish damage; Polish direction; GROWTH; AXIS;
D O I：
10.4028/www.scientific.net/MSF.725.23
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electron beam induced current (EBIC) observations have been carried out to investigate the influence of mechanical polishing (MP) direction on the dislocations formation at the Si-face c(0001) of 4H-SiC epitaxial layers. Two opposite MP directions (defined by polish pad moving direction) have been compared, which are [11-20] off-cut directions along step-up and step-down, respectively. It has been found that high density of dislocations have been formed along the polish paths for the 8 degrees off samples with polishing pad moved in step-up direction. By contrast, step-down polishing samples have shown no significant dislocation increase although shallow polish scratches were observed. Similar experiments have also been carried out for 4 degrees off samples, showing step-up MPs introduced more dislocations than step-down ones. The results are discussed in terms of forces effectively exerted in [11-20] direction along the (0001) slip planes by the abrasive particles on the steps.
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页码：23 / +
页数：2
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