246 nm AlN-delta-GaN Quantum Well Ultraviolet Light-Emitting Diode

被引：0
|
作者：
Li, Cheng [1 ]
Ooi, Yu Kee [1 ]
Islam, S. M. [2 ]
Xing, Huili [2 ,3 ]
Jena, Debdeep [2 ,3 ]
Zhang, Jing [1 ]
机构：
[1] Rochester Inst Technol, Dept Elect & Microelect Engn, Rochester, NY 14623 USA
[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[3] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode was proposed and realized experimentally, with the dominant transverse electric-polarized emission been verified by both the k.p simulation and the room-temperature polarization-dependent electroluminescence measurements.
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页数：2
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