Comment on "Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films"

被引：4

作者：

Saha, Debabrata ^{[1
,2
]}

Misra, Pankaj ^{[1
]}

Joshi, Mukesh ^{[1
]}

Kukreja, Lalit Mohan ^{[1
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Laser Mat Proc Div, Indore 452013, Madhya Pradesh, India

[2] Indian Inst Technol, Dept Energy Sci & Engn, Bombay 400076, Maharashtra, India

来源：

ADVANCED FUNCTIONAL MATERIALS | 2018年 / 28卷 / 15期

关键词：

atomic layer deposition; doping; electrical properties; thin films; ZnO;

D O I：

10.1002/adfm.201702875

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In a recent report, Lee et al. have proposed an "effective field model" for extrinsic doping to explain the electrical properties of Al-doped zinc oxide (ZnO) films grown by atomic layer deposition (ALD)([1]). They have introduced the doping model by considering the layered structure of the ALD-grown films as observed in the transmission electron microscopy measurements. However, in the present comment, we have demonstrated that the suggested doping model is misleading in which physically inconsistent assumptions are considered throughout. Herein, a reasonable interpretation of the electrical properties and doping mechanism of the ALD-grown films by taking into consideration the theoretical formulations of the disordered electronic system is suggested.

引用

页数：4

共 15 条

[1] Intrinsic limit of electrical properties of transparent conductive oxide films [J].

Chen, M ;

Pei, ZL ;

Wang, X ;

Yu, YH ;

Liu, XH ;

Sun, C ;

Wen, LS .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (20) :2538-2548

[2]

Gantmakher V, 2005, ELECT DISORDER SOLID

[3] Doping Mechanism in Transparent, Conducting Tantalum Doped ZnO Films Deposited Using Atomic Layer Deposition [J].

Gao, Zhengning ;

Myung, Yoon ;

Huang, Xing ;

Kanjolia, Ravi ;

Park, Jeunghee ;

Mishra, Rohan ;

Banerjee, Parag .

ADVANCED MATERIALS INTERFACES, 2016, 3 (21)

[4] Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films [J].

Lee, Do-Joong ;

Kim, Hyun-Mi ;

Kwon, Jang-Yeon ;

Choi, Hyoji ;

Kim, Soo-Hyun ;

Kim, Ki-Bum .

ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (03) :448-455

[5]

Mott N., 1993, Conduction in Non-Crystalline Materials

[6] In Situ Analysis of Dopant Incorporation, Activation, and Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer Deposition [J].

Na, Jeong-Seok ;

Scarel, Giovanna ;

Parsons, Gregory N. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (01) :383-388

[7] Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnO [J].

Na, Jeong-Seok ;

Peng, Qing ;

Scarel, Giovanna ;

Parsons, Gregory N. .

CHEMISTRY OF MATERIALS, 2009, 21 (23) :5585-5593

[8] Extreme tunability in aluminum doped Zinc Oxide plasmonic materials for near-infrared applications [J].

Pradhan, A. K. ;

Mundle, R. M. ;

Santiago, Kevin ;

Skuza, J. R. ;

Xiao, Bo ;

Song, K. D. ;

Bahoura, M. ;

Cheaito, Ramez ;

Hopkins, Patrick E. .

SCIENTIFIC REPORTS, 2014, 4

[9] Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition [J].

Saha, D. ;

Misra, P. ;

Bhartiya, S. ;

Gupta, M. ;

Joshi, M. P. ;

Kukreja, L. M. .

APPLIED PHYSICS LETTERS, 2016, 108 (04)

[10] Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition [J].

Saha, D. ;

Misra, P. ;

Das, Gangadhar ;

Joshi, M. P. ;

Kukreja, L. M. .

APPLIED PHYSICS LETTERS, 2016, 108 (03)

← 1 2 →