Doping efficiency in n-type InP nanowires

被引：3

作者：

Besteiro, Lucas V. ^{[1
]}

Tortajada, Luis ^{[1
]}

Souto, J. ^{[1
]}

Gallego, L. J. ^{[1
]}

Chelikowsky, James R. ^{[2
,3
]}

Alemany, M. M. G. ^{[1
]}

机构：

[1] Univ Santiago de Compostela, Fac Fis, Dept Fis Mat Condensada, E-15782 Santiago De Compostela, Spain

[2] Univ Texas Austin, Ctr Computat Mat, Inst Computat Engn & Sci, Dept Phys, Austin, TX 78712 USA

[3] Univ Texas Austin, Ctr Computat Mat, Inst Computat Engn & Sci, Dept Chem Engn, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 11期

关键词：

INDIUM-PHOSPHIDE NANOWIRES; SEMICONDUCTOR NANOWIRES; ELECTRONIC-STRUCTURE; ALXGA1-XAS ALLOYS; NANOSTRUCTURES; GAAS;

D O I：

10.1103/PhysRevB.88.115310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We examine two factors that could limit the doping of n-type III-V semiconductor nanowires, namely, the solubility of the dopants and the possible formation of DX-like defect centers. We find that it is preferable to dope zinc-blende nanowires via anion substitution as opposed to cation substitution. The comparison with previous work on n-type III-V semiconductor nanocrystals also allows us to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our work is based on quantum calculations of InP nanowires using real-space pseudopotentials constructed within density functional theory.

引用

页数：6

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