Study on the thermal stability improvement of GeTe by Al doping

被引：14

作者：

Ren, Kun ^{[1
,2
]}

Rao, Feng ^{[1
]}

Song, Zhitang ^{[1
]}

Peng, Cheng ^{[1
]}

Li, Juntao ^{[1
,2
]}

Wu, Liangcai ^{[1
]}

Liu, Bo ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.4819839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-doped GeTe is proposed for high-temperature phase-change memories (PCM). The bonding and coordination environment of Al atoms in Al2.7Ge50Te50 is studied by X-ray photoelectron spectroscopy and nuclear magnetic resonance. The large number of bonds provided by Al improves the stability of the amorphous-state (10-yr retention at 177 degrees C) as well as the uniformity of the material distribution. The low melting temperature (676 degrees C) and high set-resistance lower power-consumption of the Al2.7Ge50Te50 based cell. The high thermal stability and low power-consumption have made Al2.7Ge50Te50 material a promising candidate for high thermally stable PCM application. (C) 2013 AIP Publishing LLC.

引用

页数：4

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