Some aspects of substrate pretreatment for epitaxial Si nanowire growth

被引：28

作者：

Lugstein, A. ^{[1
]}

Hyun, Y. J. ^{[1
]}

Steinmair, M. ^{[1
]}

Dielacher, B. ^{[1
]}

Hauer, G. ^{[1
]}

Bertagnolli, E. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 48期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1088/0957-4484/19/48/485606

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the influence of the surface pretreatment for vapor-liquid-solid growth of epitaxial silicon nanowires with gold catalyst and silane precursor on Si(111) substrates. In this paper we make it obvious that a thin native oxide layer on the Si substrate-as is present under most technological conditions-or a thin layer of oxide formed on top of the catalytic gold particle restrain nucleation and nanowire growth. High resolution transmission electron microscopy, and electron energy loss spectroscopy were utilized to demonstrate Si diffusion from the substrate through the catalytic Au layer and further the formation of a thin oxide layer atop. Based on this observation we present a sample pretreatment practice, making the catalyst insensitive for further oxide formation, thereby preserving epitaxy for nanowire synthesis.

引用

页数：5

共 32 条

[1] Nanowire-based dye-sensitized solar cells [J].