105 nm Wavelength Conversion of 40-Gb/s DPSK in a Dispersion-Engineered Silicon Waveguide

被引：0

作者：

Li, Qi ^{[1
]}

Xu, Lin ^{[1
]}

Menard, Michael ^{[2
]}

Lau, Ryan K. W. ^{[3
]}

Lipson, Michal ^{[2
]}

Gaeta, Alexander L. ^{[3
]}

Bergman, Keren ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate wavelength conversion of 40-Gb/s DPSK signals across a 105-nm range in a dispersion-engineered silicon waveguide with 1.83-dB average power penalty, further confirming broadband and format-transparent parametric-processing potential in silicon.

引用

页数：2

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