On the Low-Frequency Noise Characterization of Z2-FET Devices

被引：4

作者：

Marquez, Carlos ^{[1
]}

Navarro, Carlos ^{[1
]}

Navarro, Santiago ^{[1
]}

Padilla, Jose L. ^{[1
]}

Donetti, Luca ^{[1
]}

Sampedro, Carlos ^{[1
]}

Galy, Philippe ^{[2
]}

Kim, Yong-Tae ^{[3
]}

Gamiz, Francisco ^{[1
]}

机构：

[1] Univ Granada, CITIC UGR & Excellence Res Unit, Dept Elect, E-18071 Granada, Spain

[2] STMicroelect, F-38920 Crolles, France

[3] Korea Inst Sci & Technol, Seoul 02792, South Korea

来源：

IEEE ACCESS | 2019年 / 7卷

关键词：

1T-DRAM; noise measurement; p-i-n diodes; semiconductor device reliability; silicon on insulator technology; Z(2)-FET; MECHANISMS; OPERATION;

D O I：

10.1109/ACCESS.2019.2907062

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper addresses the low-frequency noise characterization of Z(2)-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as 1T-DRAM memory cells, although other applications, as for example electro static discharge (ESD) protection, have been reported. The experimentally extracted power spectral density of current reveals that the high-diode series resistance, carrier number fluctuations due to oxide traps, and gate leakage current are the main noise contributors at high-current regimes. These mechanisms are expected to contribute to the degradation of cell variability and retention time. Higher flicker noise levels have been reported when increasing the vertical electric field. A simple model considering the contribution of the main noise sources is proposed.

引用

页码：42551 / 42556

页数：6

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