γ-Ray irradiation effects on 6H-SiC MOSFET

被引：24

作者：

Ohshima, T ^{[1
]}

Yoshikawa, M ^{[1
]}

Itoh, H ^{[1
]}

Aoki, Y ^{[1
]}

Nashiyama, I ^{[1
]}

机构：

[1] Japan Atom Energy Res Inst, Gunma 3701292, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

6H-SiC; MOSFET; pyrogenic and dry oxidation processes; gamma-ray irradiation; oxide-trapped charge; interface traps;

D O I：

10.1016/S0921-5107(98)00560-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of gamma-ray irradiation on the performance of enhancement-type n-channel 6H-SiC metal-oxide-semiconductors field effect transistors (MOSFETs) were Studied. The gate oxide of the 6H-SiC MOSFETs was fabricated using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in the MOSFETs by irradiation are evaluated from changes in the subthreshold-current curve. II is found that the net numbers of radiation-induced oxide-trapped charges and interface traps depend on the oxidation process. From a comparison of radiation response between 6H-SiC and Si MOSFFTs, 6H-SiC MOSFETs are demonstrated to have higher radiation resistance. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：480 / 484

页数：5

共 13 条

[1] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].