Scaling, power, and the future of CMOS

被引：0
|
作者：
Horowitz, M [1 ]
Alon, E [1 ]
Patil, D [1 ]
Naffziger, S [1 ]
Kumar, R [1 ]
Bernstein, K [1 ]
机构：
[1] Stanford Univ, Stanford, CA 94305 USA
来源：
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：11 / 17
页数：7
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