Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

被引：6

作者：

Xiao, Yanping ^{[1
]}

Motooka, Teruaki ^{[1
]}

Teranishi, Ryo ^{[1
]}

Munetoh, Shinji ^{[1
]}

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8190395, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 362卷

关键词：

Nucleation; Solidification; Semiconducting germanium; Semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2011.11.018

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time T-i defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7T(m) (T-m: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7T(m) is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：103 / 105

页数：3

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