Electron irradiation induced defects in monocrystalline 4H-SiC and 6H-SiC: the influence of the electron energy and doping

被引：3
|
作者：
von Bardeleben, HJ
Canon, JL
机构：
[1] Univ Paris 06, Phys Solides Grp, F-75005 Paris, France
[2] Univ Paris 07, CNRS, UMR 75 88, F-75005 Paris, France
来源：
APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期
关键词：
electron irradiation; intrinsic defects; EPR; silicon carbide;
D O I：
10.1016/S0169-4332(01)00676-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The defects introduced in n-type, intrinsic and p-type doped SiC by low energy (300 keV) room temperature electron irradiation near the silicon atom displacement threshold have been analyzed by electron paramagnetic resonance. We observed the predominant formation of defects currently assigned to carbon vacancy-hydrogen complexes in the Al doped and the high purity intrinsic material and no isolated carbon vacancies. If the models are correct, our results imply the presence of highly mobile H and their interaction with Vc defects even at 300 K. In the n-type SiC two Vs; related centers are observed tentatively attributed to 2-/3- charge states. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：237 / 241
页数：5
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