Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

被引：27

作者：

Ge, Jun ^{[1
]}

Pan, Gang ^{[1
]}

Remiens, Denis ^{[2
]}

Chen, Ying ^{[1
]}

Cao, Fei ^{[1
]}

Dong, Xianlin ^{[1
]}

Wang, Genshui ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China

[2] Univ Lille 1, Ctr Hyperfrequences & Semicond, CNRS, IEMN DOAE,UMR 8520, F-59655 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

THIN FERROELECTRIC-FILMS; SOL-GEL PROCESS; DEPOLARIZATION FIELD; BULK CERAMICS;

D O I：

10.1063/1.4752726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antiferroelectric Pb(Zr, Nb, Ti)O-3 (PZNT) films were deposited via a sol-gel process on Pt(111)/Ti/SiO2/Si, LaNiO3- and La0.5Sr0.5CoO3-buffered Si substrate. The scaling behavior of the energy density W of antiferroelectric films was investigated. The scaling behavior of W against frequency f of PZNT on LaNiO3-buffered Si takes the form of W proportional to f(0.08), which differs significantly from that form of W proportional to f(-0.14) of PZNT on La0.5Sr0.5CoO3-buffered Si. This indicates that the scaling relations of W vary substantially as bottom electrodes change and might be closely related to the variation of nonuniform strain field and depolarization field within the AFE films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752726]

引用

页数：3

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