High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

A high-performance Schottky diode based on a 600-mu m-thick Cr-doped beta-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency-related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high-qualityGa(2)O(3) single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 x 1018 cm-3 and an electron mobility of similar to 90 cm(2)/Vs. The current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.19 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. The frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density