High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

被引：32
作者：
Du, Lulu [1 ,2 ,3 ]
Xin, Qian [1 ,2 ,3 ]
Xu, Mingsheng [1 ,2 ,3 ]
Liu, Yaxuan [1 ,2 ,3 ]
Mu, Wenxiang [3 ]
Yan, Shiqi [1 ,2 ,3 ]
Wang, Xinyu [4 ]
Xin, Gongming [5 ]
Jia, Zhitai [3 ]
Tao, Xu-Tang [3 ]
Song, Aimin [1 ,2 ,3 ,6 ]
机构：
[1] Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China
[2] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[4] Shandong Univ, Inst Thermal Sci & Technol, Jinan 250061, Shandong, Peoples R China
[5] Shandong Univ, Sch Energy & Power Engn, Jinan 250061, Shandong, Peoples R China
[6] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 03期
基金：
中国博士后科学基金; 英国工程与自然科学研究理事会;
关键词：
Ga2O3; Schottky barrier diodes (SBDs); tin oxide (SnOx); FILMS;
D O I：
10.1109/LED.2019.2893633
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance Schottky diode based on a 600-mu m-thick Cr-doped beta-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency-related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high-qualityGa(2)O(3) single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 x 1018 cm-3 and an electron mobility of similar to 90 cm(2)/Vs. The current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.19 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. The frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density
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页码：451 / 454
页数：4
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