Limitations of LET in Predicting the Radiation Response of Advanced Devices

被引：1

作者：

Funkhouser, Erik D. ^{[1
]}

Weller, Robert A. ^{[1
]}

Reed, Robert A. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Mendenhall, Marcus H. ^{[1
]}

Asai, Makoto ^{[2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37237 USA

[2] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 04期

关键词：

Hardness-assurance; linear energy transfer (LET) enhancement; Monte Carlo simulation; radiation effects; single event effects; straggling; CROSS-SECTION; ENERGY; PROTON; SIMULATION; IMPACT; CMOS; SEU; ENHANCEMENT; VOLTAGE; UPSETS;

D O I：

10.1109/TNS.2015.2429579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of high-Z metals on energy deposition in thin volumes due to direct ionization by ions in space environments is examined. The importance of energy loss straggling in small volumes typical of those found in advanced devices is also evaluated. It is found that direct ionization by protons over a large energy range may contribute significantly to error rates in advanced silicon on insulator devices due to energy loss straggling. This improves on conventional event rate analysis based on linear energy transfer, which does not describe the contributions of direct ionization by protons to the error rate.

引用

页码：1558 / 1567

页数：10

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