Late-news poster: High-frequency performance of sub-micrometer channel-length Si TFTs fabricated on large grain poly-Si films

被引：3

作者：

Kawachi, Genshiro ^{[1
]}

Mitani, Masahiro ^{[1
]}

Okada, Takashi ^{[1
]}

Tsuboi, Shinzo ^{[1
]}

机构：

[1] Adv LCD Technol Dev Ctr Co Ltd, Yokohama, Kanagawa 2440817, Japan

来源：

2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II | 2007年 / 38卷

关键词：

D O I：

10.1889/1.2785283

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

High-frequency characteristics of sub-micron Si TFTs fabricated oil large-grain poly-Si films are demonstrated for the first lime. A cutoff frequency (f(T)) of 6GHz and a maximum oscillation frequency (f(max)) of 25 GHz were obtained for the TFT with a channel length of 0.5 mu m. It was confirmed that use of insulating substrates is advantageous to reduce the parasitic of 25 GHz were obtained for the TFT with a channel length of 0.5 mu m. It was confirmed that use of insulating substrates is advantageous to reduce the parasitic susceptance due to a conductive substrate, thereby increasing f(max) .

引用

页码：276 / 279

页数：4

共 8 条

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