Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulation

被引：14
作者：
Aubry-Fortuna, V [1 ]
Bournel, A [1 ]
Dollfus, P [1 ]
Galdin-Retailleau, S [1 ]
机构：
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 04期
关键词：
D O I：
10.1088/0268-1242/21/4/003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semi-classical Monte Carlo simulation is used to study the electrical performance of 18-nm-long n-MOSFETs Including a strained Si channel. In particular, the impact of extrinsic series resistance on the drive current I-on is quantified: we show that the large on-current improvement induced by the strain is preserved, even by including an external parasitic resistance. The importance of ballistic transport is also examined and its influence on I-on is highlighted.
引用
收藏
页码：422 / 428
页数：7
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